Fluorination, and Tunneling across Molecular Junctions
نویسندگان
چکیده
منابع مشابه
Fluorination, and tunneling across molecular junctions.
This paper describes the influence of the substitution of fluorine for hydrogen on the rate of charge transport by hole tunneling through junctions of the form Ag(TS)O2C(CH2)n(CF2)(m)T//Ga2O3/EGaIn, where T is methyl (CH3) or trifluoromethyl (CF3). Alkanoate-based self-assembled monolayers (SAMs) having perfluorinated groups (R(F)) show current densities that are lower (by factors of 20-30) tha...
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Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium ...
متن کاملCoherent Tunneling Transport in Molecular Junctions†
Using saturated alkyl chain series with a dithiol anchor group, we systematically examined the intrinsic charge transport of single-molecule junctions in an electromigrated nanogap electrode. The saturated alkyl molecular system constitutes an important control series in molecular transport experiments to corroborate valid molecular junctions, because molecular energy levels remain nearly uncha...
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Electron tunneling experiments involving Hg-Hg junctions incorporating two alkanethiolate monolayers are described. Formation of a symmetric junction (Hg-SCn-CnS-Hg) is accomplished by bringing in contact two small (3 × 10-3 cm2) mercury drop electrodes in a 5-20% (v/v) hexadecane solution of an alkanethiol. Formation of asymmetric junctions (Hg-SCn-CmS-Hg) and junctions containing n-alkane-3th...
متن کاملInelastic electron tunneling spectroscopy in molecular junctions: peaks and dips.
We study inelastic electron tunneling through a molecular junction using the nonequilibrium Green's function formalism. The effect of the mutual influence between the phonon and the electron subsystems on the electron tunneling process is considered within a general self-consistent scheme. Results of this calculation are compared to those obtained from the simpler Born approximation and the sim...
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ژورنال
عنوان ژورنال: Journal of the American Chemical Society
سال: 2015
ISSN: 0002-7863,1520-5126
DOI: 10.1021/jacs.5b00137